Geant4-Based Spatially Resolved LET and Charge Trapping correction in Photonic Integrated Circuits.

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This Geant4-based framework enables spatially resolved energy deposition calculations in photonic integrated circuits where conventional dose models fail due to sub-micron device dimensions. By accounting for secondary electron ranges and fast geminate recombination processes, the model provides an accurate estimation of Linear Energy Transfer (LET) in irradiated waveguides. This advancement is essential for improving the reliability of radiation-hardened photonic components in space applications.